FMC1晶体管资料

  • FMC1(A)别名:FMC1(A)三极管、FMC1(A)晶体管、FMC1(A)晶体三极管

  • FMC1(A)生产厂家

  • FMC1(A)制作材料:Si-N/P+R

  • FMC1(A)性质:表面帖装型 (SMD)

  • FMC1(A)封装形式:贴片封装

  • FMC1(A)极限工作电压:50V

  • FMC1(A)最大电流允许值:0.1A

  • FMC1(A)最大工作频率:<1MHZ或未知

  • FMC1(A)引脚数:5

  • FMC1(A)最大耗散功率

  • FMC1(A)放大倍数

  • FMC1(A)图片代号:H-21

  • FMC1(A)vtest:50

  • FMC1(A)htest:999900

  • FMC1(A)atest:0.1

  • FMC1(A)wtest:0

  • FMC1(A)代换 FMC1(A)用什么型号代替

FMC1价格

参考价格:¥4.0763

型号:FMC12A2200000 品牌:Apem 备注:这里有FMC1多少钱,2025年最近7天走势,今日出价,今日竞价,FMC1批发/采购报价,FMC1行情走势销售排行榜,FMC1报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FMC1

Complex Transistor (Digital Transistors)

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.79Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.79Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.52Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.58Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.58Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.47Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

Ku, K-Band Poewr GaAs Modules

FEATURES High Output Power: P1dB = 18dBm(Typ,) High Gain: G1dqB = 14.5dB(Typ,) Low In/Out VSWR Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 5082 Hermetically Sealed Package (12 X 15 X 3.5mmi)

Fujitsu

富士通

KU,K-Band Poewr GaAs Modules

FEATURE *High Output Power: P1dB = 12dBm(Typ,) *High Gain: G1dB = 13.5dB(Typ,) *Low In/Out VSWR *Low Noise; NF = 2.5dB (Typ,) *Broad Band: 18.7 ~ 19.7GHz * Impedance Matched Zin/Zout = 508 *Hermetically Sealed Package (12 X 15 X 3.5mmi)

Fujitsu

富士通

Ku-K-Band Power CaAs Modules

FEATURES * High Output Power: PldB = 21dBm(Typ,) * High Gain: G1dB = 13.5dB(Typ,) * Low In/Out VSWR *Broad Band: 18.7 ~ 19.7GHz * Impedance Matched Zin/Zzout = 508 * Hermetically Sealed Package (12 X 15 X 3.5mm)

Fujitsu

富士通

封装/外壳:0402(1005 公制) 包装:散装 描述:FUSE CHIP 1A 24VDC 0402 电路保护 保险丝

ETC

知名厂家

一次性保险丝

kamaya

釜屋电机

一次性保险丝

kamaya

釜屋电机

封装/外壳:0402(1005 公制) 包装:散装 描述:FUSE CHIP 1.25A 24VDC 0402 电路保护 保险丝

ETC

知名厂家

N-CHANNEL SILICON POWER MOSFETFeatures

文件:642.92 Kbytes Page:5 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:626.98 Kbytes Page:5 Pages

Fuji

富士通

Snap-in rocker switches - panel cut-out 19 x 13 (.750 x .508)

文件:279.09 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-CHANNEL SILICON POWER MOSFET

文件:523.12 Kbytes Page:5 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:570.79 Kbytes Page:5 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:589.27 Kbytes Page:5 Pages

Fuji

富士通

.100 2.54 mm Contact Centers, .431 10.95 mm Insulator Height, Dip Solder/Eyelet/Right Angle for .062 1.57 mm or .031 0.79 mm Mating PCB

文件:731.3 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-CHANNEL SILICON POWER MOSFET

文件:529.01 Kbytes Page:5 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:594.48 Kbytes Page:5 Pages

Fuji

富士通

UL 1977 Effortless & Arcless Din Connectors 160A/320A/430A

文件:5.034 Mbytes Page:3 Pages

AIO

安费诺

N-CHANNEL SILICON POWER MOSFET

文件:438.31 Kbytes Page:5 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:543.2 Kbytes Page:5 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:532.12 Kbytes Page:5 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:583.63 Kbytes Page:5 Pages

Fuji

富士通

FMC1产品属性

  • 类型

    描述

  • 型号

    FMC1

  • 制造商

    Pacific

  • 功能描述

    CLOSED BUSHING 10MM

更新时间:2025-12-25 11:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
24+
SOT153
12851
绝对原装现货,价格低,欢迎询购!
ROHM/罗姆
23+
SOT-153
98650
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
FuJITSU
25+
SMD
2789
全新原装自家现货!价格优势!
INFINEON
100
原装现货,价格优惠
ROHM
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
SUMITOMO
2318+
原厂
3285
十年专业专注 优势渠道商正品保证公司现货
ROHM
25+23+
Sot-153
32970
绝对原装正品全新进口深圳现货
ROHM/罗姆
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
原厂
2023+
模块
600
专营模块,继电器,公司原装现货

FMC1数据表相关新闻