isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.58Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

N-CHANNEL SILICON POWER MOSFET

文件：529.01 Kbytes Page：5 Pages

功率MOSFET 600V-700V

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.58Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

N-CHANNEL SILICON POWER MOSFET

文件：594.48 Kbytes Page：5 Pages

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switch

N-Channel MOSFET 600V, 13A, 0.258廓

Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world

N-Channel MOSFET 600V, 13A, 0.258廓

Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world

N-Channel 650V (D-S) Power MOSFET

文件：1.06712 Mbytes Page：9 Pages

isc N-Channel MOSFET Transistor

文件：301.97 Kbytes Page：2 Pages