Fusible Flameproof Resistors

FEATURES High stability, accuracy, and reliability Noncombustible coating Uniform fusing time Low temperature coefficient (350ppm/o C ) For wire wound version, see FKN

Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

4-Kbit (512 × 8) Serial (SPI) F-RAM

Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage cur

SILICON EPITAXIAL PLANCE TYPE

FEATURES • Plastic package has Underwriters Laboratory • Flammability classification 94V-0 Utilizing Fame • Retardant Epoxy Molding Compound • For surface mount applications • Exceeds environmental standards of MIL-S-19500/228 • Low leakage current.

Chip Schottky Barrier Diodes

Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage curren

Chip Schottky Barrier Rectifier

2.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • Low po

SMD Schottky Barrier Rectifier

2.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • Low po

Chip Schottky Barrier Rectifier

2.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • Low po

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxialplaner type Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 /228 Low leakage curr

50 Watt DC-DC Converters

Wide input voltage from 8...372 V DC 1, 2 or 3 isolated outputs up to 48 V DC 4 kV AC I/O electric strength test voltag • Rugged electrical and mechanical design • Outputs individually controlled with excellent dynamic properties • Operating ambient temperature range –40...71°C

2K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C020U is a 2K (2,048) bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Dataout (SO) pins to synchronously control da

2K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C020U is a 2K (2,048) bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Dataout (SO) pins to synchronously control da

2K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C020U is a 2K (2,048) bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Dataout (SO) pins to synchronously control da

2K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C020U is a 2K (2,048) bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Dataout (SO) pins to synchronously control da

4K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C040U is a 4K (4,096) bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Data out (SO) pins to synchronously control

4K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C040U is a 4K (4,096) bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Data out (SO) pins to synchronously control

4K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C040U is a 4K (4,096) bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Data out (SO) pins to synchronously control

4K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C040U is a 4K (4,096) bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Data out (SO) pins to synchronously control

4K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C041U is a 4K (4,096) bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Dataout (SO) pins to synchronously control da

4K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C041U is a 4K (4,096) bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Dataout (SO) pins to synchronously control da

4K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C041U is a 4K (4,096) bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Dataout (SO) pins to synchronously control da

4K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C041U is a 4K (4,096) bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Dataout (SO) pins to synchronously control da

16K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C160U is a 16K bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Data-out (SO) pins to synchronously control data t

16Kb Serial 5V F-RAM Memory

Description The FM25C160B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 38 years while eliminating the complexities, over

16Kb Serial 5V F-RAM Memory

Description The FM25C160B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 38 years while eliminating the complexities, over

16Kb Serial 5V F-RAM Memory

Description The FM25C160B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 38 years while eliminating the complexities, over

16K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C160U is a 16K bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Data-out (SO) pins to synchronously control data t

16K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C160U is a 16K bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Data-out (SO) pins to synchronously control data t

16K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C160U is a 16K bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Data-out (SO) pins to synchronously control data t

64K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C640U is a 64K bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Data-out (SO) pins to synchronously control data tra

64K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C640U is a 64K bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Data-out (SO) pins to synchronously control data tra

64K-Bit SPI??Interface Serial CMOS EEPROM

General Description The FM25C640U is a 64K bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Data-out (SO) pins to synchronously control data tra

VersaKit-30xx Development System Overview

• VRS51L3074 in QFP-64 package soldered onboard (contact Ramtron for details on the VRS51L3174 in QFP-44 package and the VRS51L2070) • FM31xx MCU companion, FM25xx SPI FRAM and FM24xx I²C FRAM devices installed • 5x2 header to connect VJTAG-USB programming/debugging interface • 2 DB9 serial por

2M-BIT SERIAL FLASH MEMORY

1. Description The FM25F02A is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms. The FM25F02A supports the standard Serial Peripheral Interface (SPI), and a high performance Dual output as well as Dual I/O. The FM25F02A can be programmed 1 to 256 bytes at

2M-BIT SERIAL FLASH MEMORY

1. Description The FM25F02A is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms. The FM25F02A supports the standard Serial Peripheral Interface (SPI), and a high performance Dual output as well as Dual I/O. The FM25F02A can be programmed 1 to 256 bytes at

32M-BIT Serial Flash Memory with 4KB Sectors, Dual and Quad I/O SPI

GENERAL DESCRIPTION The FM25Q32 Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing

128Kb Serial 3V F-RAM Memory

Description The FM25V01 is a 128-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

128-Kbit (16K 횞 8) Serial (SPI) F-RAM

Functional Description The FM25V01A is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-leve

128-Kbit (16K 횞 8) Serial (SPI) F-RAM

Functional Description The FM25V01A is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-leve

128-Kbit (16K 횞 8) Serial (SPI) F-RAM

Functional Description The FM25V01A is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-leve

128Kb Serial 3V F-RAM Memory

Description The FM25V01 is a 128-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

128Kb Serial 3V F-RAM Memory

Description The FM25V01 is a 128-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

256Kb Serial 3V F-RAM Memory

Description The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while e

512Kb Serial 3V F-RAM Memory

Description The FM25V05 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

512Kb Serial 3V F-RAM Memory

Description The FM25V05 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

512Kb Serial 3V F-RAM Memory

Description The FM25V05 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over

1Mb Serial 3V F-RAM Memory

Description The FM25V10 is a 1-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, over