位置:FM25040B_V01 > FM25040B_V01详情

FM25040B_V01中文资料

厂家型号

FM25040B_V01

文件大小

686.76Kbytes

页面数量

22

功能描述

4-Kbit (512 × 8) Serial (SPI) F-RAM

数据手册

下载地址一下载地址二到原厂下载

简称

CYPRESS赛普拉斯

生产厂商

Cypress Semiconductor

中文名称

赛普拉斯半导体公司官网

FM25040B_V01数据手册规格书PDF详情

Features

■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8

❐ High-endurance 100 trillion (1014) read/writes

❐ 151-year data retention (See the Data Retention and Endurance table)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

■ Very fast serial peripheral interface (SPI)

❐ Up to 20 MHz frequency

❐ Direct hardware replacement for serial flash and EEPROM

❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

■ Sophisticated write protection scheme

❐ Hardware protection using the Write Protect (WP) pin

❐ Software protection using Write Disable instruction

❐ Software block protection for 1/4, 1/2, or entire array

■ Low power consumption

❐ 250 ㎂ active current at 1 MHz

❐ 4 ㎂ (typ) standby current

■ Voltage operation: VDD = 4.5 V to 5.5 V

■ Industrial temperature: –40 ℃ to +85 ℃

■ 8-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant

Functional Description

The FM25040B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

Unlike serial flash and EEPROM, the FM25040B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25040B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.

These capabilities make the FM25040B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.

The FM25040B provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The FM25040B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The device specifications are guaranteed over an industrial temperature range of –40 ℃ to +85 ℃.

For a complete list of related documentation, click here.

更新时间:2025-10-19 10:30:00
供应商 型号 品牌 批号 封装 库存 备注 价格
Cypress
22+
8SOIC
9000
原厂渠道,现货配单
Cypress
23+
8-SOIC
36430
专业分销产品!原装正品!价格优势!
CYPRESS
23+
CYPRESS
9808
原厂授权代理分销现货只做原装正迈科技样品支持现货
CYPRESS
19+
565
原装正品
CYPRESS
2020+
NVP
3300
绝对全新原装,一片也是批量价.
CYPRESS
25+
SOP-8
4854
就找我吧!--邀您体验愉快问购元件!
CYPRESS/赛普拉斯
20+
SOIC-8
1
进口原装现货假一赔万力挺实单
CYPRESS/赛普拉斯
2023+
SOP8
225
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
CYPRESS/赛普拉斯
23+
N/A
98900
原厂原装正品现货!!
CYPRESS/赛普拉斯
20+
SOIC-8
1940