Description

The FM25C160B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

Features

• 16K bit Ferroelectric Nonvolatile RAM

• Organized as 2,048 x 8 bits

• High Endurance 1 Trillion (1012) Read/Writes

• 38 year Data Retention

• NoDelay™ Writes

• Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

• Up to 20 MHz maximum Bus Frequency

• Direct hardware replacement for EEPROM

• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Sophisticated Write Protection Scheme

• Hardware Protection

• Software Protection

Low Power Consumption

• 250 μA Active Current (1 MHz)

• 4 μA (typ.) Standby Current

Industry Standard Configuration

• Industrial Temperature -40°C to +85°C

• 8-pin “Green”/RoHS SOIC (-G)