SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 1.0 Ampere

FEATURES * Low switching noise * Low forward voltage drop * High current capability * High switching capability * High surge capabitity * High reliability * P/N suffix V means AEC-Q 101 qualified, e.g:FM120V * P/N suffix V means Halogen-free

Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage current .

1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V

Features •Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. •Low profile surface mounted application in order to optimize board space. •Low power loss, high efficiency. •High current capability, low forward voltage drop.

Schottky Diodes

256Kb Bytewide 5V F-RAM Memory

Description The FM1808B is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High E

256Kb Bytewide 5V F-RAM Memory

Description The FM1808B is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High E

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 1.0 Ampere

FEATURES * Low switching noise * Low forward voltage drop * High current capability * High switching capability * High surge capabitity * High reliability * P/N suffix V means AEC-Q 101 qualified, e.g:FM120BV * P/N suffix V means Halogen-free

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant EpoxyMolding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

SILICON EPITAXIAL PLANCE TYPE

FEATURES • Plastic package has Underwriters Laboratory • Flammability classification 94V-0 Utilizing Fame • Retardant Epoxy Molding Compound • For surface mount applications • Exceeds environmental standards of MIL-S-19500/228 • Low leakage current.

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant EpoxyMolding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

CHIIIP SCHOTTKY BARRIIIER RECTIIIFIIIER

1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V FEATURES • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. •

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

Constant current constant voltage IC

文件：343.36 Kbytes Page：6 Pages

HIGH VOLTAGE RECTIFIER VOLTAGE RANGE 1200 to 3500 Volts CURRENT 0.2 to 0.5 Ampere

文件：128.9 Kbytes Page：6 Pages

HIGH VOLTAGE RECTIFIER

文件：34.13 Kbytes Page：2 Pages

Constant current constant voltage IC

文件：222.95 Kbytes Page：6 Pages

256Kb Bytewide FRAM Memory

文件：89.9 Kbytes Page：12 Pages

256Kb Bytewide FRAM Memory

256Kb Bytewide FRAM Memory

文件：89.9 Kbytes Page：12 Pages

256Kb Bytewide FRAM Memory

文件：89.9 Kbytes Page：12 Pages

256Kb Bytewide FRAM Memory

文件：89.9 Kbytes Page：12 Pages

256Kb Bytewide FRAM Memory

文件：89.9 Kbytes Page：12 Pages

256Kb Bytewide 5V F-RAM Memory

文件：94.79 Kbytes Page：11 Pages

256Kb Bytewide 5V F-RAM Memory

封装/外壳：28-SOIC（0.295"，7.50mm 宽） 包装：托盘 描述：IC FRAM 256KBIT PARALLEL 28SOIC 集成电路（IC） 存储器

256Kb Bytewide 5V F-RAM Memory

文件：94.79 Kbytes Page：11 Pages

封装/外壳：28-SOIC（0.295"，7.50mm 宽） 包装：卷带（TR） 描述：IC FRAM 256KBIT PARALLEL 28SOIC 集成电路（IC） 存储器

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 80 to 100 Volts CURRENT 1.0 Ampere

文件：31.86 Kbytes Page：3 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 1.0 Ampere

文件：359.12 Kbytes Page：4 Pages

Chip Schottky Barrier Rectifier

文件：173.18 Kbytes Page：7 Pages

Chip Schottky Barrier Diodes

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Chip Schottky Barrier Rectifier

文件：65.28 Kbytes Page：7 Pages

SMD Schottky Barrier Rectifier

文件：64.099 Kbytes Page：7 Pages

1A SMD SCHOTTKY BARRIER RECTIFIERS, 20V-200V

文件：632.69 Kbytes Page：3 Pages

Chip Schottky Barrier Rectifier

文件：65.15 Kbytes Page：7 Pages

1A SMD SCHOTTKY BARRIER RECTIFIERS, 20V-200V

文件：636.27 Kbytes Page：3 Pages

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

Silicon Power Transistor High Power Audio Amplifier

Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und