SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 1.0 Ampere

FEATURES * Low switching noise * Low forward voltage drop * High current capability * High switching capability * High surge capabitity * High reliability * P/N suffix V means AEC-Q 101 qualified, e.g:FM120V * P/N suffix V means Halogen-free

Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage current .

1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V

Features •Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. •Low profile surface mounted application in order to optimize board space. •Low power loss, high efficiency. •High current capability, low forward voltage drop.

Schottky Diodes

50 Watt DC-DC Converters

Wide input voltage from 8...372 V DC 1, 2 or 3 isolated outputs up to 48 V DC 4 kV AC I/O electric strength test voltag • Rugged electrical and mechanical design • Outputs individually controlled with excellent dynamic properties • Operating ambient temperature range –40...71°C

64Kb Bytewide 5V F-RAM Memory

Functional Overview The FM1608B is a 8 K × 8 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating

64Kb Bytewide 5V F-RAM Memory

Functional Overview The FM1608B is a 8 K × 8 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 1.0 Ampere

FEATURES * Low switching noise * Low forward voltage drop * High current capability * High switching capability * High surge capabitity * High reliability * P/N suffix V means AEC-Q 101 qualified, e.g:FM120BV * P/N suffix V means Halogen-free

Schottky Diodes

分立

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant EpoxyMolding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

SILICON EPITAXIAL PLANCE TYPE

FEATURES • Plastic package has Underwriters Laboratory • Flammability classification 94V-0 Utilizing Fame • Retardant Epoxy Molding Compound • For surface mount applications • Exceeds environmental standards of MIL-S-19500/228 • Low leakage current.

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant EpoxyMolding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

CHIIIP SCHOTTKY BARRIIIER RECTIIIFIIIER

1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V FEATURES • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. •

1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

FEATURES ● PLASTIC MATERIAL USED CARRIES UNDERWRITERS LABORATORY CLASSIFICATION 94 V-0 ● FOR SURFACE MOUNTED APPLICATIONS ● EXCEEDS ENVIRONMENTAL STANDARDS OF MIL-S-19500 / 228 ● LOW LEAKAGE CURRENT

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

HIGH VOLTAGE RECTIFIER VOLTAGE RANGE 1200 to 3500 Volts CURRENT 0.2 to 0.5 Ampere

文件：128.9 Kbytes Page：6 Pages

包装：散装 描述：DC/DC CONVERTER 24V 48W 电源 - 外部/内部（板外） 直流转换器

包装：散装 描述：DC/DC CONVERTER 电源 - 外部/内部（板外） 工业，DIN 导轨电源

64Kb Bytewide FRAM Memory

文件：104.34 Kbytes Page：12 Pages

64Kb Bytewide FRAM Memory

文件：104.34 Kbytes Page：12 Pages

64Kb Bytewide FRAM Memory

文件：104.34 Kbytes Page：12 Pages

64Kb Bytewide FRAM Memory

文件：104.34 Kbytes Page：12 Pages

64Kb Bytewide 5V F-RAM Memory

文件：94.71 Kbytes Page：11 Pages

64Kb Bytewide 5V F-RAM Memory

64Kb Bytewide 5V F-RAM Memory

文件：94.71 Kbytes Page：11 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：34.13 Kbytes Page：3 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere

文件：34.51 Kbytes Page：3 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 1.0 Ampere

文件：359.12 Kbytes Page：4 Pages

Chip Schottky Barrier Rectifier

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Chip Schottky Barrier Diodes

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1A SMD SCHOTTKY BARRIER RECTIFIERS, 40V-200V

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Chip Schottky Barrier Rectifier

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Chip Schottky Barrier Rectifier

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SMD Schottky Barrier Rectifier

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1A SMD SCHOTTKY BARRIER RECTIFIERS, 20V-200V

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Chip Schottky Barrier Rectifier

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1A SMD SCHOTTKY BARRIER RECTIFIERS, 20V-200V

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Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(10A,320-380V,125W)