FK20晶体管资料

  • FK205A别名:FK205A三极管、FK205A晶体管、FK205A晶体三极管

  • FK205A生产厂家:中国大陆半导体企业

  • FK205A制作材料

  • FK205A性质:功率开关 (PSW)

  • FK205A封装形式:直插封装

  • FK205A极限工作电压

  • FK205A最大电流允许值:3A

  • FK205A最大工作频率:<1MHZ或未知

  • FK205A引脚数:2

  • FK205A最大耗散功率:30W

  • FK205A放大倍数

  • FK205A图片代号:E-44

  • FK205Avtest:0

  • FK205Ahtest:999900

  • FK205Aatest:3

  • FK205Awtest:30

  • FK205A代换 FK205A用什么型号代替

FK20价格

参考价格:¥1.9792

型号:FK20C0G1H104J 品牌:TDK 备注:这里有FK20多少钱,2025年最近7天走势,今日出价,今日竞价,FK20批发/采购报价,FK20行情走势销售排行榜,FK20报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FK20

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

FK20

MLCC with Dipped Radial Lead

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead Commercial Grade

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead Commercial Grade

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead Commercial Grade

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead Commercial Grade

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead Commercial Grade

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead Commercial Grade

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead Commercial Grade

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead Commercial Grade

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead Commercial Grade

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

MLCC with Dipped Radial Lead Commercial Grade

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................250V ● rDS (ON) (MAX) .............................................................. 0.24Ω ● ID .......................................................................................

Mitsubishi

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................250V ● rDS (ON) (MAX) .............................................................. 0.24Ω ● ID .......................................................................................

POWEREX

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.92Ω ● ID .......................................................................................

Mitsubishi

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.92Ω ● ID .......................................................................................

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.33Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................500V ● rDS (ON) (MAX) .............................................................. 0.36Ω ● ID .......................................................................................

Mitsubishi

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................500V ● rDS (ON) (MAX) .............................................................. 0.36Ω ● ID .......................................................................................

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.36 Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................250V ● rDS (ON) (MAX) ..............................................................0.24Ω ● ID ................................................................................

Mitsubishi

三菱电机

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.24 Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE VDSS ................................................................................300V rDS (ON) (MAX) ..............................................................0.33Ω ID ......................................................................................

Mitsubishi

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc.

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.33 Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) ..............................................................0.30Ω ● ID ................................................................................

Mitsubishi

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) ..............................................................0.30Ω ● ID ........................................................................................

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3 Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................250V ● rDS (ON) (MAX) .............................................................. 0.24Ω ● ID .......................................................................................

Mitsubishi

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................250V ● rDS (ON) (MAX) .............................................................. 0.24Ω ● ID .......................................................................................

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................250V ● rDS (ON) (MAX) .............................................................. 0.24Ω ● ID .......................................................................................

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.24Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 300V ● rDS (ON) (MAX) ............................................................. 0.33Ω ● ID ........................................................................................

Mitsubishi

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 300V ● rDS (ON) (MAX) ............................................................. 0.33Ω ● ID ........................................................................................

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.33Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................250V ● rDS (ON) (MAX) .............................................................. 0.24Ω ● ID .......................................................................................

Mitsubishi

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................250V ● rDS (ON) (MAX) .............................................................. 0.24Ω ● ID .......................................................................................

POWEREX

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................300V ● rDS (ON) (MAX) .............................................................. 0.33Ω ● ID .......................................................................................

Mitsubishi

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................300V ● rDS (ON) (MAX) .............................................................. 0.33Ω ● ID .......................................................................................

POWEREX

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

Multilayer Ceramic Capacitors

Overview of the FK General (Up to 50V) Series FEATURES • High capacitance has been achieved through improvements in the thinning process of ceramic dielectric layers and multi-layer lamination technology. • High reliability is maintained under specified environmental conditions. • Low residual

TDK

东电化

FK20产品属性

  • 类型

    描述

  • 型号

    FK20

  • 制造商

    TDK

  • 制造商全称

    TDK Electronics

  • 功能描述

    Multilayer Ceramic Capacitors

更新时间:2025-11-26 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TDK/东电化
18+
DIP-2
3200
TDK
18+
SMD
288000
原装正品价格优势
PERICOMSEMICONDUCTOR
24+
SMD
880000
明嘉莱只做原装正品现货
MITSUBISHI/三菱
25+
TO-3P
32360
MITSUBISHI/三菱全新特价FK20SM-10即刻询购立享优惠#长期有货
MIT
23+
TO-3P
5000
专做原装正品,假一罚百!
MITSUBIS
2223+
TO-3P
26800
只做原装正品假一赔十为客户做到零风险
MIT
25+
TO-3P
18000
原厂直接发货进口原装
DIODES/美台
24+
NA
30000
房间原装现货特价热卖,有单详谈
RENESAS/瑞萨
2450+
TO220
8850
只做原装正品假一赔十为客户做到零风险!!
MIT
23+
TO-263
8560
受权代理!全新原装现货特价热卖!

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