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FK20晶体管资料

FK205A别名：FK205A三极管、FK205A晶体管、FK205A晶体三极管
FK205A生产厂家：中国大陆半导体企业
FK205A制作材料：
FK205A性质：功率开关（PSW）
FK205A封装形式：直插封装
FK205A极限工作电压：
FK205A最大电流允许值：3A
FK205A最大工作频率：<1MHZ或未知
FK205A引脚数：2
FK205A最大耗散功率：30W
FK205A放大倍数：
FK205A图片代号：E-44
FK205Avtest：0
FK205Ahtest：999900
FK205Aatest：3
FK205Awtest：30

FK205A代换 FK205A用什么型号代替：

FK20价格

参考价格：￥1.9792

型号：FK20C0G1H104J 品牌：TDK 备注：这里有FK20多少钱，2025年最近7天走势，今日出价，今日竞价，FK20批发/采购报价，FK20行情走势销售排行榜，FK20报价。

型号	功能描述	生产厂家&企业
FK20	Multilayer Ceramic Capacitors OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20	MLCC with Dipped Radial Lead OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G1H104J	Multilayer Ceramic Capacitors OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G1H223J	Multilayer Ceramic Capacitors OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G1H333J	Multilayer Ceramic Capacitors OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G1H473J	Multilayer Ceramic Capacitors OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G1H683J	Multilayer Ceramic Capacitors OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2A153J	MLCC with Dipped Radial Lead Commercial Grade OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2A153J	MLCC with Dipped Radial Lead OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2A223J	MLCC with Dipped Radial Lead Commercial Grade OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2A223J	MLCC with Dipped Radial Lead OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2A333J	MLCC with Dipped Radial Lead Commercial Grade OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2A333J	MLCC with Dipped Radial Lead OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2A473J	MLCC with Dipped Radial Lead Commercial Grade OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2A473J	MLCC with Dipped Radial Lead OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2E103J	MLCC with Dipped Radial Lead OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2E103J	MLCC with Dipped Radial Lead Commercial Grade OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2E153J	MLCC with Dipped Radial Lead OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2E153J	MLCC with Dipped Radial Lead Commercial Grade OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2J392J	MLCC with Dipped Radial Lead OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2J392J	MLCC with Dipped Radial Lead Commercial Grade OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2J472J	MLCC with Dipped Radial Lead OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2J472J	MLCC with Dipped Radial Lead Commercial Grade OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2J562J	MLCC with Dipped Radial Lead Commercial Grade OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2J562J	MLCC with Dipped Radial Lead OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2J682J	MLCC with Dipped Radial Lead OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20C0G2J682J	MLCC with Dipped Radial Lead Commercial Grade OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20KM-5	HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................250V ●rDS(ON)(MAX)..............................................................0.24Ω ●ID.......................................................................................	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
FK20KM-5	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................250V ●rDS(ON)(MAX)..............................................................0.24Ω ●ID.......................................................................................	POWEREX Powerex Power Semiconductors
FK20KM-6	HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................450V ●rDS(ON)(MAX)..............................................................0.92Ω ●ID.......................................................................................	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
FK20KM-6	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................450V ●rDS(ON)(MAX)..............................................................0.92Ω ●ID.......................................................................................	POWEREX Powerex Power Semiconductors
FK20KM-6	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.33Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FK20SM-10	HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.36Ω ●ID.......................................................................................	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
FK20SM-10	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.36Ω ●ID.......................................................................................	POWEREX Powerex Power Semiconductors
FK20SM-10	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FK20SM-5	HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................250V ●rDS(ON)(MAX)..............................................................0.24Ω ●ID................................................................................	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
FK20SM-5	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FK20SM-6	HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE VDSS................................................................................300V rDS(ON)(MAX)..............................................................0.33Ω ID......................................................................................	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
FK20SM-6	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE APPLICATION Servomotordrive,Robot,UPS,InverterFluorecentlamp,etc.	POWEREX Powerex Power Semiconductors
FK20SM-6	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.33Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FK20SM-9	HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................450V ●rDS(ON)(MAX)..............................................................0.30Ω ●ID................................................................................	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
FK20SM-9	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................450V ●rDS(ON)(MAX)..............................................................0.30Ω ●ID........................................................................................	POWEREX Powerex Power Semiconductors
FK20SM-9	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FK20UM-5	HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................250V ●rDS(ON)(MAX)..............................................................0.24Ω ●ID.......................................................................................	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
FK20UM-5	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................250V ●rDS(ON)(MAX)..............................................................0.24Ω ●ID.......................................................................................	POWEREX Powerex Power Semiconductors
FK20UM-5	MITSUBISHI Nch POWER MOSFET HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................250V ●rDS(ON)(MAX)..............................................................0.24Ω ●ID.......................................................................................	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
FK20UM-5	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FK20UM-6	HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS...............................................................................300V ●rDS(ON)(MAX).............................................................0.33Ω ●ID........................................................................................	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
FK20UM-6	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS...............................................................................300V ●rDS(ON)(MAX).............................................................0.33Ω ●ID........................................................................................	POWEREX Powerex Power Semiconductors
FK20UM-6	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.33Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FK20VS-5	HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................250V ●rDS(ON)(MAX)..............................................................0.24Ω ●ID.......................................................................................	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
FK20VS-5	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................250V ●rDS(ON)(MAX)..............................................................0.24Ω ●ID.......................................................................................	POWEREX Powerex Power Semiconductors
FK20VS-6	HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................300V ●rDS(ON)(MAX)..............................................................0.33Ω ●ID.......................................................................................	MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社
FK20VS-6	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................300V ●rDS(ON)(MAX)..............................................................0.33Ω ●ID.......................................................................................	POWEREX Powerex Power Semiconductors
FK20X5R0J107M	Multilayer Ceramic Capacitors OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20X5R0J226M	Multilayer Ceramic Capacitors OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20X5R0J336M	Multilayer Ceramic Capacitors OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20X5R0J476M	Multilayer Ceramic Capacitors OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20X5R0J686M	Multilayer Ceramic Capacitors OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司
FK20X5R1A156M	Multilayer Ceramic Capacitors OverviewoftheFKGeneral(Upto50V)Series FEATURES •Highcapacitancehasbeenachievedthroughimprovementsinthethinningprocessofceramicdielectriclayersandmulti-layerlaminationtechnology. •Highreliabilityismaintainedunderspecifiedenvironmentalconditions. •Lowresidual	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司

FK20产品属性

类型
描述
型号
FK20
制造商
TDK
制造商全称
TDK Electronics
功能描述
Multilayer Ceramic Capacitors

FK20供应商更多...

更新时间：2025-8-2 11:26:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市中联芯电子有限公司	FK20X7R2A474KN006	TDK	24+	N/A	9000	只做原装正品有挂有货假一赔十	询价
深圳市创新迹电子有限公司	FK20Y5V1H475Z	TDK/东电化	23+	DIP	6800	专注配单,只做原装进口现货	询价
深圳市骏创达科技有限公司	FK20SL26-08V-5783	MOLEX/莫仕	2508+	/	182881	一级代理，原装现货	询价
贸泽芯城（深圳）电子科技有限公司	FK20X7R2A474KNE40	TDK/东电化	23+	SMD	2000000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市富利微电子科技有限公司	FK2000026	DIODES/美台	24+	NA	30000	房间原装现货特价热卖,有单详谈	询价
深圳市富芯拓展电子有限公司	FK20SM-10	RENESAS	20+	TO3P	854	原装	询价
现代芯城（深圳）科技有限公司	FK20Y5V1A476Z		24+	N/A	69000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市安富世纪电子有限公司	FK20Y5V1H475Z	TDK/东电化	23+	DIP	6800	专注配单,只做原装进口现货	询价
艾睿（深圳）半导体有限公司	FK20SM-10	MITSUBIS	2447	TO-3P	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
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