HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................250V ●rDS(ON)(MAX)..............................................................0.24Ω ●ID................................................................................

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.19Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MITSUBISHINchPOWERMOSFET

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................250V ●rDS(ON)(MAX)..............................................................0.19Ω ●ID......................................................................................

NchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................250V ●rDS(ON)(MAX)..............................................................0.19Ω ●ID......................................................................................