HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 300V ● rDS (ON) (MAX) ............................................................. 0.33Ω ● ID ........................................................................................

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 300V ● rDS (ON) (MAX) ............................................................. 0.33Ω ● ID ........................................................................................

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.33Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET

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HIGH-SPEED SWITCHING USE

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MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ......................................................................................