330V, 90A PDP Trench IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses areessential. Features • High current capability • Low saturation voltage: VCE(sat) =1.1V @ IC=

330V, 90A PDP Trench IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses areessential. Features • High current capability • Low saturation voltage: VCE(sat) =1.1V @ IC=

330V, 90A PDP Trench IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses areessential. Features • High current capability • Low saturation voltage: VCE(sat) =1.1V @ IC=

Trench Gate, High Speed, IGBTs

Trench Gate, High Speed, IGBTs For PDP Applications Features • Low VCE(sat) - for minimum On-State Conduction Losses • Fast Switching Applications • PDP Screen Drivers

330V, 90A PDP Trench IGBT

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