330V, 90A PDP Trench IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses areessential. Features • High current capability • Low saturation voltage: VCE(sat) =1.1V @ IC=

330V, 90A PDP Trench IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses areessential. Features • High current capability • Low saturation voltage: VCE(sat) =1.1V @ IC=

330V，PDP 沟槽 IGBT

安森美半导体的新型沟槽 IGBT 系列采用新型沟槽 IGBT 技术，为低导通和开关损耗至关重要的 PDP 应用提供最佳性能。 •高电流能力\n•低饱和电压： VCE(sat) =1.1V @ IC = 20A\n•高输入阻抗\n•快速开关\n•符合 RoHS 标准;

330V, 90A PDP Trench IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses areessential. Features • High current capability • Low saturation voltage: VCE(sat) =1.1V @ IC=

330V, 90A PDP Trench IGBT

文件：517.039 Kbytes Page：9 Pages

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR） 描述：IGBT 330V 90A 223W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

330V, 90A PDP Trench IGBT

文件：655.18 Kbytes Page：8 Pages

Trench Gate, High Speed, IGBTs

Trench Gate, High Speed, IGBTs For PDP Applications Features • Low VCE(sat) - for minimum On-State Conduction Losses • Fast Switching Applications • PDP Screen Drivers