Trench Gate, High Speed, IGBTs

Trench Gate, High Speed, IGBTs For PDP Applications Features • Low VCE(sat) - for minimum On-State Conduction Losses • Fast Switching Applications • PDP Screen Drivers

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 330V 90A 200W TO263AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单

330V, 90A PDP Trench IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses areessential. Features • High current capability • Low saturation voltage: VCE(sat) =1.1V @ IC=

330V, 90A PDP Trench IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses areessential. Features • High current capability • Low saturation voltage: VCE(sat) =1.1V @ IC=

330V, 90A PDP Trench IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses areessential. Features • High current capability • Low saturation voltage: VCE(sat) =1.1V @ IC=

330V, 90A PDP Trench IGBT

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