IGBT，600V，5A，场截止

飞兆半导体的新型系列场截止 IGBT 产品采用新型场截止 IGBT 技术，为 HID 镇流器等低导通损耗至关重要的应用提供最佳性能。 •高电流能力\n•低饱和电压：VCE(sat) =1.7V @ IC = 5A\n•高输入阻抗\n•符合 RoHS 标准;

600V, 5A Field Stop IGBT

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封装/外壳：TO-220-3 包装：管件 描述：IGBT FIELD STOP 600V 10A TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ

Short Circuit Rated IGBT

General Description Fairchilds RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters

Short Circuit Rated IGBT

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Short Circuit Rated IGBT

文件：615.22 Kbytes Page：8 Pages