Field Stop Trench IGBT 650 V, 50 A

Field stop 4th generation mid speed IGBT technology and full current rated copak Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.45 V (Typ.)

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 650V 50A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT - 650 V 50 A FS4 medium switching speed IGBT

Field Stop Trench IGBT 650 V, 50 A

Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC =

Field Stop Trench IGBT 650 V, 50 A

Field stop 4th generation mid speed IGBT technology copacked with full rated current diode. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC =

IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode

IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode

封装/外壳：TO-247-4 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FS4 MID SPEED IGBT 650V 50A TO24 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Hybrid IGBT, 50 A, 650 V

Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL50T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless

Field Stop Trench IGBT 50A, 650V

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Field Stop Trench IGBT 50A, 650V

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Hybrid IGBT 50A, 650V

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IGBT - Field Stop, Trench 650 V, 50 A

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