IGBT - Field Stop, Trench 650 V, 75 A

文件：2.196 Mbytes Page：9 Pages

IGBT，650V，75A 场截止沟槽

IGBT - Field Stop, Trench 650 V, 75 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum

IGBT - Field Stop, Trench 650 V, 75 A

文件：2.196 Mbytes Page：9 Pages

封装/外壳：TO-247-4 包装：管件 描述：IGBT FIELD STOP 650V 150A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT，650V，75A 场截止沟槽

IGBT, 650 V, 75 A Field Stop Trench

IGBT - Field Stop, Trench IGBT - Field Stop, Trench

文件：465.39 Kbytes Page：9 Pages

封装/外壳：TO-247-4 包装：管件 描述：FS3 T TO247 75A 650V 4WL 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.1V@IC=75A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters

IGBT – Hybrid, Field Stop, Trench 650 V, 75 A, TO247

Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless

Field Stop Trench IGBT

文件：246.44 Kbytes Page：9 Pages

Field Stop Trench IGBT 650 V, 75 A

文件：340.62 Kbytes Page：9 Pages

Hybrid Field Stop Trench IGBT 650 V, 75 A, TO247

文件：261.649 Kbytes Page：10 Pages