600V, 60A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS, IH and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature :

IGBT - Field Stop 600 V, 60 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum

封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 600V 120A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT，600V，60A，场截止

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 120A 600W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

Ultra-Low VCE(sat) IGBT

Features ● International standard package SOT-227B ● Aluminium nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● Very high current, fast switching IGBT ● Low VCE(sat) for minimum on-state conduction losses ● MOS Gate turn-on drive simplicity ● Low collector-to-cas

HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

600 V, 60 A Field Stop IGBT

Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UP

Super Junction MOSFET

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