FGH60N60SFT价格

参考价格:¥21.3929

型号:FGH60N60SFTU 品牌:Fairchild 备注:这里有FGH60N60SFT多少钱,2025年最近7天走势,今日出价,今日竞价,FGH60N60SFT批发/采购报价,FGH60N60SFT行情走势销售排行榜,FGH60N60SFT报价。
型号 功能描述 生产厂家 企业 LOGO 操作

600V, 60A Field Stop IGBT

General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential. Features • High current capability •

Fairchild

仙童半导体

封装/外壳:TO-247-3 包装:管件 描述:IGBT FIELD STOP 600V 120A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

IXYS

艾赛斯

Ultra-Low VCE(sat) IGBT

Features ● International standard package SOT-227B ● Aluminium nitride isolation - high power dissipation ● Isolation voltage 3000 V~ ● Very high current, fast switching IGBT ● Low VCE(sat) for minimum on-state conduction losses ● MOS Gate turn-on drive simplicity ● Low collector-to-cas

IXYS

艾赛斯

HiPerFASTTM IGBTs with Diode

HiPerFAST™ IGBTs with Diode C2-Class High Speed IGBTs Features • International Standard Package miniBLOC • Aluminium Nitride Isolation - High Power Dissipation • Anti-Parallel Ultra Fast Diode • Isolation Voltage 3000 V~ • Low VCE(sat) for Minimum On-State Conduction Losses • MOS Gate Turn

IXYS

艾赛斯

600 V, 60 A Field Stop IGBT

Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UP

Fairchild

仙童半导体

Super Junction MOSFET

文件:401.12 Kbytes Page:5 Pages

ADPOW

FGH60N60SFT产品属性

  • 类型

    描述

  • 型号

    FGH60N60SFT

  • 功能描述

    IGBT 晶体管 N-CH/600V 60A/ FS

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-12-30 16:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
23+
TO247
53271
##公司主营品牌长期供应100%原装现货可含税提供技术
FAIRCHILD
25+23+
TO247
9524
绝对原装正品全新进口深圳现货
FAIRCHILD
原装
12220
一级代理 原装正品假一罚十价格优势长期供货
ON/安森美
2450+
TO-247
9850
只做原装正品现货或订货假一赔十!
FAIRCHILDSEM
2025+
TO-247-3
3577
全新原厂原装产品、公司现货销售
Fairchild/ON
22+
TO247
9000
原厂渠道,现货配单
三年内
1983
只做原装正品
Fairchild(飞兆/仙童)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
FSC
22+
TO-247
20000
公司只做原装 品质保障
FAIRCHILD/仙童
2447
TO247
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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