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FGH40N65UFDTU价格
参考价格：￥14.9168
型号：FGH40N65UFDTU 品牌：Fairchild 备注：这里有FGH40N65UFDTU多少钱，2025年最近7天走势，今日出价，今日竞价，FGH40N65UFDTU批发/采购报价，FGH40N65UFDTU行情走势销售排行榜，FGH40N65UFDTU报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FGH40N65UFDTU | 650V, 40A Field Stop IGBT General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE | Fairchild 仙童半导体 |   | |
FGH40N65UFDTU | DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 | | |
FGH40N65UFDTU | IGBT - Field Stop 650 V, 40 A Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Volt | ONSEMI 安森美半导体 | | |
FGH40N65UFDTU | 封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 650V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | |
IGBT - Field Stop 650 V, 40 A Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Volt | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 650V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | ||
650V, 40A Field Stop IGBT General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE | Fairchild 仙童半导体 | | ||
Field Stop IGBT 650 V, 40 A General Description Using novel field stop IGBT technology, onsemi’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Featu | ONSEMI 安森美半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | Fairchild 仙童半导体 | | ||
N-Channel Enhancement Mode MOSFET 文件：241.88 Kbytes Page：4 Pages | DACO 罡境电子 | | ||
New Products, Tips and Tools for Power and Mobile Applications 文件：3.23672 Mbytes Page：12 Pages | Fairchild 仙童半导体 | |
FGH40N65UFDTU产品属性
- 类型
描述
- 型号
FGH40N65UFDTU
- 功能描述
IGBT 晶体管 N-ch/40A 650V
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHI |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
FAIRCHILDSEM |
2025+ |
TO-247-3 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
ON/安森美 |
2410+ |
TO-247 |
80000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
FAIRCHILD/仙童 |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FSC |
23+ |
TO-247 |
4093 |
全新原装正品现货,支持订货 |
|||
FAIRCHI |
25+ |
TO-3P |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
FAIRCHILD/仙童 |
22+ |
TO247 |
12245 |
现货,原厂原装假一罚十! |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
FAIRCHILD/仙童 |
24+ |
TO-3P |
30000 |
只做正品原装现货 |
FGH40N65UFDTU规格书下载地址
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DdatasheetPDF页码索引
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