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FGH40N65UFDTU价格
参考价格：￥14.9168
型号：FGH40N65UFDTU 品牌：Fairchild 备注：这里有FGH40N65UFDTU多少钱，2026年最近7天走势，今日出价，今日竞价，FGH40N65UFDTU批发/采购报价，FGH40N65UFDTU行情走势销售排行榜，FGH40N65UFDTU报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FGH40N65UFDTU | 650V, 40A Field Stop IGBT General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE | FAIRCHILD 仙童半导体 |   | |
FGH40N65UFDTU | DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FAIRCHILD 仙童半导体 | | |
FGH40N65UFDTU | IGBT - Field Stop 650 V, 40 A Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Volt | ONSEMI 安森美半导体 | | |
FGH40N65UFDTU | 封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 650V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | |
IGBT - Field Stop 650 V, 40 A Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Volt | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 650V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | ||
650V, 40A Field Stop IGBT General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE | FAIRCHILD 仙童半导体 | | ||
Field Stop IGBT 650 V, 40 A General Description Using novel field stop IGBT technology, onsemi’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Featu | ONSEMI 安森美半导体 | | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti | FAIRCHILD 仙童半导体 | | ||
N-Channel Enhancement Mode MOSFET 文件：241.88 Kbytes Page：4 Pages | DACO 罡境电子 | | ||
New Products, Tips and Tools for Power and Mobile Applications 文件：3.23672 Mbytes Page：12 Pages | FAIRCHILD 仙童半导体 | |
FGH40N65UFDTU产品属性
- 类型
描述
- 型号
FGH40N65UFDTU
- 功能描述
IGBT 晶体管 N-ch/40A 650V
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO-3P |
9600 |
原装现货,优势供应,支持实单! |
|||
三年内 |
1983 |
只做原装正品 |
|||||
FAIRCHILD/仙童 |
2447 |
TO247 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Fairchild(飞兆/仙童) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
FAIRCHILD |
26+ |
SOP8 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
FAIRCHILD/仙童 |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCHI |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
|||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
FAIRCHI |
25+ |
TO-3P |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
FSC |
11+ |
TO247 |
800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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DdatasheetPDF页码索引
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