丝印代码：FGH40N65UFD；IGBT - Field Stop 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Volt

IGBT，650V，40A，1.8V，TO-247，低 VCE(ON) 场截止

飞兆半导体的场截止 IGBT 系列采用新型场截止 IGBT 技术，为光伏逆变器、UPS、焊机和 PFC 等低导通和开关损耗至关重要的应用提供了最佳性能。 •高电流能力\n•低饱和电压： VCE(sat) =1.8V @ IC = 40A\n•高输入阻抗\n•快速开关： EOFF =12uJ/A\n•符合 RoHS 标准;

650V, 40A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE

丝印代码：FGH40N65UFDTU；IGBT - Field Stop 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Volt

650V, 40A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 650V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 650V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Field Stop IGBT 650 V, 40 A

General Description Using novel field stop IGBT technology, onsemi’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Featu

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

IGBT with Monolithic Reverse Conducting Diode

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