封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：IGBT 300V 120A 290W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

300V PDP IGBT

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isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·motor drive, D

GigaMOS Power MOSFET

GigaMOS™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • High Current Handling Capability • Fast Intrinsic Diode • Avalanche Rated • Low RDS(on) Advantages • Easy to Mount • Space Savings • High Power Density A

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive ·AC Motor Drives ·Battery Charges

300V, 120A PDP IGBT

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