丝印代码：FFSD0665B；Silicon Carbide Schottky Diode

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丝印代码：FFSD0665B；Silicon Carbide Schottky Diode 650 V, 6 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

丝印代码：FFSD0665B；Silicon Carbide Schottky Diode

文件：306.53 Kbytes Page：6 Pages

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, DPAK

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the • High UIS, Surge Current, and Avalanche\n• 49mJ @ 25C\n• High Junction Temperature\n• Tj = 175C\n• Low Vf\n• 1.41V\n• No Qrr\n• ;

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：650V 6A SIC SBD GEN1.5 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 6A, 650V, D2, DPAK

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and\nhigher reliability compared to Silicon. No reverse recovery\ncurrent, temperature independent switching characteristics, and\nexcellent thermal performance sets Silicon Carbide as • Max Junction Temperature 175 oC\n• PPAP capable\n• Avalanche Rated 24.5mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery\n• AEC-Q101 Qualified;

Silicon Carbide Schottky Diode 650 V, 6 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT） 描述：650V 6A SIC SBD GEN1.5 分立半导体产品 二极管 - 整流器 - 单

丝印代码：CDP0665GB；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

SMD 5.0x3.2 26.0MHz Crystal Unit

Features: Surface Mount Seam Weld Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Description and Applications: Surface mount 5.0mmx3.2mm crystal unit for use in wireless telecommunications devices, especially for a need of ultra miniatu

SWITCHING REGULATOR APPLICATION

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Advanced N-Ch Power MOSFET

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SWITCHING REGULATOR APPLICATION

文件：389.15 Kbytes Page：8 Pages