Silicon Carbide Schottky Diode

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封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：散装 描述：DIODE SBD 10A 120V D2PAK-3 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode 1200 V, 20 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

Silicon Carbide Schottky Diode 1200 V, 20 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：1200V 20A AUTO SIC SBD 分立半导体产品 二极管 - 整流器 - 单

碳化硅（SiC）肖特基二极管- EliteSiC 20A 1200V D1 D2PAK封装

Silicon Carbide Schottky Diode

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1200 V αSiC Silicon Carbide Schottky Barrier Diode

Features • Proprietary αSiC Schottky Barrier Diode technology • Negligible reverse recovery current • Maximum operating junction temperature of 175°C • Improved switching losses vs. Si bipolar diodes • Positive temperature coefficient for ease of paralleling Applications Renewable Industr

LOW VF SCHOTTKY RECTIFIER

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LOW VF SCHOTTKY RECTIFIER

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Ultra low forward voltage drop, low power loss

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Ultra low forward voltage drop, low power loss

文件：67.95 Kbytes Page：4 Pages