Fast recovery type

Fast recovery type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame RetardantEpoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

Surface Mount Glass Passivated Super Fast Rectifiers Reverse Voltage 50 to 1000V Forward Current 2.0A

FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High temperature metallurgically bonded construction * Cavity-free glass passivated junction * Capable of meeting environmental standards of MIL-S-19500 * Fast Switching for high efficiency * Typical I

SURFACE MOUNT FAST RECOVER Y RECTIFIER DIODES

Features ● Glass Passivated Die Construction ● Ideally Suited for Automatic Assembly ● Low Forward Voltage Drop, High Efficiency ● Low Power Loss ● Fast Recovery Time ● Plastic Case Material has UL Flammability Classification Rating 94V-O

2A 600V Fast recovery diode

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SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES

文件：370.163 Kbytes Page：2 Pages

Fast Recovery Rectifier 

Fast Recovery Rectifiers

Underwriters Laboratory

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SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes)

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Plastic package has Underwriters Laboratory

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Chip Silicon Rectifier - Fast recovery type

Fast recovery type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame RetardantEpoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current

SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes

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SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 600 Volts CURRENT 2.0 Amperes

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Chip Silicon Rectifier

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Chip Silicon Rectifier

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Chip Silicon Rectifier

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Fast Recovery

Chip Fast Recovery Rectifiers

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SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Ampere

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Chip Fast Recovery Rectifiers

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N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.