丝印代码：FDS6690；30V N-Channel MOSFET

Features Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 11 A RDS(ON)

Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description This N Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with compar

Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFET

Single N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and

Dual Notebook Power Supply N-Channel PowerTrench SyncFET?

General Description The FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986S contains two unique 30V, N-channel, logic l

30V N-Channel PowerTrench SyncFET

General Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky dio

30V N-Channel PowerTrench짰 SyncFET?

General Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky dio

N-Channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 13 A RDS(ON)

N 沟道，PowerTrench® SyncFET™，30V，10A，12mΩ

FDS6690AS设计用于替代同步DC:DC电源中的一个单SO-8 MOSFET和肖特基二极管。 此30V MOSFET设计用于最大限度地提高功率转换效率，提供低RDS(ON)和低栅极电荷。 FDS6690AS包含使用飞兆半导体单片SyncFET技术的集成肖特基二极管。 FDS6690AS在同步整流器中作为低端开关的性能与FDS6690A并联一个肖特基二极管的性能相似。 •10A，30V\n•RDS(ON) = 12 mΩ @ VGS = 10V\n•RDS(ON) = 15 mΩ @ VGS = 4.5V\n•包含SyncFET肖特基体二极管\n•低栅极电荷（典型值16 nC）。\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力;

30V N-Channel PowerTrench짰 SyncFET?

General Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky dio

30V N-Channel PowerTrench SyncFET

General Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky dio

N-Channel 30-V (D-S) MOSFET

Application « Reverse Battery protection » Load switch o Power management PWM Application

30V N-Channel PowerTrenchÒ SyncFET™

General Description\nThe FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690S includes an integrated Schottky diode u • 10 A, 30 V.\n   RDS(ON) = 0.016 W @ VGS = 10 V\n   RDS(ON) = 0.024 W @ VGS = 4.5 V\n• Includes SyncFET Schottky diode\n• Low gate charge (11 nC typical)\n• High performance trench technology for extremely low\n   RDS(ON)\n• High power and current handling capabilityApplications\n• DC/DC converter\;

30V N-Channel PowerTrench SyncFET?

General Description The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690S includes an integrated Schottky diode

Dual-Synchronous, Step-Down Controller with Out-of-Audio??Operation and 100-mA LDOs for Notebook System Power

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N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 12 m

N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 12 m

30V N-Channel PowerTrench SyncFET

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky di

ROM Interface IC

GENERAL DESCRIPTION The MSM6690 can drive three devices of 131,072 x 8-bit EPROM or Mask ROM. The MSM6690 contains a built-in internal address generator circuit and one external clock input that enables contiued serial read operations. The internal address counter is automatically incremented by