General Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6035AL/FDB6035AL in parallel with a Schottky diode.

Features

• 21 A, 30 V. RDS(ON) = 15.5 mW @ VGS = 10 V RDS(ON) = 23.0 mW @ VGS = 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge (11nC typical)

• High performance trench technology for extremely low RDS(ON) and fast switching

• High power and current handling capability