N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 12 m

N-Channel, Logic Level, PowerTrenchTM MOSFET

N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 12 m

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=46A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =12mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 80A RDS(ON)

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

30V N-Channel PowerTrench MOSFET

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30V N沟道PowerTrench® MOSFET

30V N-Channel PowerTrench짰 SyncFET?

General Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky dio

1000 Base-T Magnetic Modules

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1000 Base-T Magnetic module

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System DC Power Supply

文件：318.82 Kbytes Page：5 Pages

AR6690

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