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FDN359价格
参考价格：￥0.4160
型号：FDN359AN 品牌：Fairchild 备注：这里有FDN359多少钱，2026年最近7天走势，今日出价，今日竞价，FDN359批发/采购报价，FDN359行情走势销售排行榜，FDN359报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FDN359 | N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and batte | Fairchild 仙童半导体 |   | |
N-Channel 30 V (D-S) MOSFET Features VDS (V) = 27V RDS(ON) | UMW 友台半导体 | | ||
N-Channel 30 V (D-S) MOSFET General Description This N-Channel Logic Level MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applicatio | EVVOSEMI 翊欧 | | ||
N-Channel 30 V (D-S) MOSFET General Description This N-Channel Logic Level MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applicatio | EVVOSEMI 翊欧 | | ||
N-Channel Logic Level PowerTrench™ MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and batt | ONSEMI 安森美半导体 | | ||
N-Channel 30 V (D-S) MOSFET Features VDS (V) = 27V RDS(ON) | UMW 友台半导体 | | ||
N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and batte | Fairchild 仙童半导体 | | ||
N-Channel 30 V (D-S) MOSFET Features VDS (V) = 30V RDS(ON) | UMW 友台半导体 | | ||
N-Channel 30 V (D-S) MOSFET General Description This N-Channel Logic Level MOSFET is produced using process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line | EVVOSEMI 翊欧 | | ||
N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba | Fairchild 仙童半导体 | | ||
N-Channel 30 V (D-S) MOSFET Features VDS (V) = 30V RDS(ON) | UMW 友台半导体 | | ||
N-Channel 30 V (D-S) MOSFET General Description This N-Channel Logic Level MOSFET is produced using process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line | EVVOSEMI 翊欧 | | ||
N-Channel Logic Level PowerTrench TM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba | Fairchild 仙童半导体 | | ||
N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba | Fairchild 仙童半导体 | | ||
N 沟道，逻辑电平，PowerTrench® MOSFET，30V，2.7A，46mΩ | ONSEMI 安森美半导体 | | ||
N 沟道逻辑电平 PowerTrench® MOSFET 30V，2.7A，46mΩ | ONSEMI 安森美半导体 | | ||
Low Noise, Low Drift, Low Power 3-Axis MEMS Accelerometer GENERAL DESCRIPTION The digital output ADXL3591 is a low noise density, low 0 g offset drift, low power, 3-axis microelectromechanical system (MEMS) accelerometer with selectable measurement ranges. The ADXL359 supports the ±10 g, ±20 g, and ±40 g ranges. The ADXL359 offers industry leading n | AD 亚德诺 | | ||
Flat screw terminals Heavy-duty version with grooved flat terminals, 1-pole 文件：168.4 Kbytes Page：1 Pages | WECO | | ||
1310 & 1550 nm Standard and Ultra Fiber Optic Delay Line Modules 文件：420.8 Kbytes Page：2 Pages | EMCORE Emcore Corporation | | ||
Zero Dispersion Modules 文件：413.8 Kbytes Page：2 Pages | EMCORE Emcore Corporation | | ||
Dispersion Compensation Module 文件：499.15 Kbytes Page：2 Pages | EMCORE Emcore Corporation | |
FDN359产品属性
- 类型
描述
- 型号
FDN359
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
N-Channel Logic Level PowerTrenchTM MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SOT-23 |
16048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON(安森美) |
24+ |
SOT-23(SOT-23-3) |
8548 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ONSEMI |
25+ |
SOT-23 |
6000 |
全新原装现货、诚信经营! |
|||
ON/安森美 |
24+ |
SOT-23 |
12000 |
只做原装合作共赢长期订货 |
|||
ON/安森美 |
2019+ |
SOT-23 |
78550 |
原厂渠道 可含税出货 |
|||
ONSEMI |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
ON/安森美 |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
|||
仙童 |
24+ |
NA |
6800 |
||||
ON/安森美 |
19+ |
SSOT-3 |
30000 |
||||
FAIRCHILD/仙童 |
25+ |
SOT-23 |
39059 |
FAIRCHILD/仙童全新特价FDN359AN-NL即刻询购立享优惠#长期有货 |
FDN359芯片相关品牌
FDN359规格书下载地址
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FDN359数据表相关新闻
FDN358P ON SEMICONDUCTOR
FDN358P ON SEMICONDUCTOR
2020-9-27FDN358P
FDN358P FDN358P
2020-5-7FDN359BN
FDN359BN
2020-3-14FDN358P原装正品
FDN358P原装正品
2019-5-5FDN360P公司原装现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-13FDN359BN公司原装现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-13
DdatasheetPDF页码索引
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