General Description

This N-Channel Logic Level MOSFET is produced

using process that has been especially tailored to

minimize on-state resistance and yet maintain

superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

VDS (V) = 30V

RDS(ON)< 46mΩ (VGS = 10V)

RDS(ON)