N-Channel 30 V (D-S) MOSFET

Features VDS (V) = 27V RDS(ON)

N-Channel 30 V (D-S) MOSFET

General Description This N-Channel Logic Level MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applicatio

N-Channel 30 V (D-S) MOSFET

General Description This N-Channel Logic Level MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applicatio

N-Channel 30 V (D-S) MOSFET

Features VDS (V) = 27V RDS(ON)

N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and batte

N 沟道，逻辑电平，PowerTrench® MOSFET，30V，2.7A，46mΩ

Low Noise, Low Drift, Low Power 3-Axis MEMS Accelerometer

GENERAL DESCRIPTION The digital output ADXL3591 is a low noise density, low 0 g offset drift, low power, 3-axis microelectromechanical system (MEMS) accelerometer with selectable measurement ranges. The ADXL359 supports the ±10 g, ±20 g, and ±40 g ranges. The ADXL359 offers industry leading n

Flat screw terminals Heavy-duty version with grooved flat terminals, 1-pole

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1310 & 1550 nm Standard and Ultra Fiber Optic Delay Line Modules

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Zero Dispersion Modules

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Dispersion Compensation Module

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