N-Channel Logic Level PowerTrench TM MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba

N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba

N-Channel 30 V (D-S) MOSFET

Features VDS (V) = 30V RDS(ON)

N-Channel 30 V (D-S) MOSFET

General Description This N-Channel Logic Level MOSFET is produced using process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line

N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba

Low Noise, Low Drift, Low Power 3-Axis MEMS Accelerometer

GENERAL DESCRIPTION The digital output ADXL3591 is a low noise density, low 0 g offset drift, low power, 3-axis microelectromechanical system (MEMS) accelerometer with selectable measurement ranges. The ADXL359 supports the ±10 g, ±20 g, and ±40 g ranges. The ADXL359 offers industry leading n

Flat screw terminals Heavy-duty version with grooved flat terminals, 1-pole

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1310 & 1550 nm Standard and Ultra Fiber Optic Delay Line Modules

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Zero Dispersion Modules

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Dispersion Compensation Module

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