丝印代码：358；P−CHANNEL MOSFET

Features • Low gate charge (4 nC typical) • High performance trench technology for extremely low R DS(ON) . • High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30 higher power handling capability. • VDS (V) = -30V • ID = -1.5 A • RDS(ON) 90m (VGS = -

单 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-1.5A，125mΩ

P-Channel Logic Level Enhancement Mode Field Effect Transistor

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DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS

Dual Low Power Operational Amplifiers Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature 1) low power drain, 2) a common mode input voltage range extending to ground/VEE, 3) single supply or split supply operation

DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS

Dual Low Power Operational Amplifiers Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature 1) low power drain, 2) a common mode input voltage range extending to ground/VEE, 3) single supply or split supply operation

Low Power Dual Operational Amplifiers

文件：1.0094 Mbytes Page：25 Pages

Low Power Dual Operational Amplifiers

文件：1.0094 Mbytes Page：25 Pages

Low Power Dual Operational Amplifiers

文件：1.0094 Mbytes Page：25 Pages