FDN335N
20V N-Channel Enhancemen t ModeMOSFET
VDS= 20V
RDS(ON)， Vgs@ 2.5V， Ids@ 1.7A= 70mΩ
RDS(ON)， Vgs@ 2.5V， Ids@ 1.5A=100mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
-BSS84
-50V P-Channel Enhancement Mode MOSFET
VDS= -50V
RDS(ON)， Vgs@-10V， Ids@-0.1A＜8Ω
RDS(ON)， Vgs@-5， Ids@-0.1A ＜10Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
