P-Channel 30 V (D-S) MOSFET

Features ■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30 higher power handling capability.

P-Channel 30 V (D-S) MOSFET

General Description These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package. Features ■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High

P-Channel 30 V (D-S) MOSFET

Features ■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30 higher power handling capability.

P-Channel 30 V (D-S) MOSFET

General Description These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package. Features ■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-1.3 A (VGS =-10V) ● RDS(ON)

Single P-Channel, PowerTrench

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ –1.3 A, –30

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-1.3 A (VGS =-10V) ● RDS(ON)

Single P-Channel, PowerTrench MOSFET

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单 P 沟道，PowerTrench® MOSFET，-30V，-1.3A，180mΩ

Single P-Channel, PowerTrench MOSFET

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