Single P-Channel, PowerTrench

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ –1.3 A, –30

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-1.3 A (VGS =-10V) ● RDS(ON)

丝印代码：52AP；P-Channel 30 V (D-S) MOSFET

Features ■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30 higher power handling capability.

丝印代码：52AP；P-Channel 30 V (D-S) MOSFET

General Description These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package. Features ■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High

单 P 沟道，PowerTrench® MOSFET，-30V，-1.3A，180mΩ

此P沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件非常适合需要在很小尺寸的表面贴装封装中实现低线内功率损耗的低电压和电池供电应用。 •-1.3A，-30V\n•RDS(ON) = 180 mΩ @ VGS = -10V\n•-1.1A，-30V\n•RDS(ON) = 300 mΩ @ VGS = -4.5V\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率版本的工业标准SOT-23封装。 相同的SOT-23引脚，可将功率处理能力提高30%。;

Single P-Channel, PowerTrench MOSFET

文件：123.56 Kbytes Page：5 Pages

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-1.3 A (VGS =-10V) ● RDS(ON)

Single P-Channel, PowerTrench MOSFET

文件：123.56 Kbytes Page：5 Pages

P-Channel MOSFET

文件：1.0468 Mbytes Page：4 Pages

P-Channel MOSFET

文件：1.58312 Mbytes Page：4 Pages

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

Square Type

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Square Type

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