General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V

–1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V

■ High performance trench technology for extremely low RDS(ON).

■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30 higher power handling capability.

Applications

■ Notebook computer power management