N-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • 1.7 A, 20 V.

20 V N-Channel Enhancement Mode MOSFET

VDS= 20VΩ RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70mΩ RDS(ON), Vgs@ 2.5V, Ids@ 1.5A=100mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ● TrenchFET Power MOSFET ● Supper high density cell design

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ● TrenchFET Power MOSFET ● Supper high density cell design APPLICATION ※ Battery protection ※ Load switch ※ Battery management

N 沟道，2.5V 指定，PowerTrench™ MOSFET，20V，1.7A，70mΩ

场效应管

低压MOS场效应管

N-Channel 20 V (D-S) MOSFET

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Work horse clamp with increased performance and flexibility

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ECHOTEL짰NON-CONTACTULTRASOUND

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INTERCONNECTS Low Profile, .018??dia. Pins Single and Double Row

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Celeron D Processor

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DIFFERENTIAL LVPECL AND LVDS VCXO

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