General Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• 1.7 A, 20 V.

RDS(ON) = 0.07 Ω @ VGS = 4.5 V

RDS(ON) = 0.100 Ω @ VGS = 2.5 V.

• Low gate charge (3.5nC typical).

• High performance trench technology for extremely low RDS(ON).

• High power and current handling capability.

Applications

• DC/DC converter

• Load switch