P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –20 V, –1.5 A. Rds(on)= 125 mΩ@ Vgs= –4.5

P-Channel Mosfet

Product Summary Vbss= -20V, Ip=-2.8A RDS(on) 80m Q@-2.5V( Typ) 110mQ@-4.5V (Typ ) ' High Power and current handing capability Lead free product is acquired Surface Mount Package

P-Channel 2.5 V (D-S) MOSFET

Features VDS (V) = -20V RDS(ON)

P-Channel 2.5 V (D-S) MOSFET

Applications Power management Load switch Battery protection Features VDS (V) = -20V RDS(ON)

P 沟道，2.5V 指定，PowerTrench™ MOSFET，-20V，-1.5A，125mΩ

Compact, Portable Military Fast Ethernet Switch

FEATURES Driven by rapid advancement and lower costs, Ethernet is becoming the standard for IP-based components in a wide range of military and commercial land, sea, and air applications. The MILTECH 308’s ultra-compact, IP68 rugged construction, and Fast Ethernet make it the ideal switching

2 (50.8 mm) Single Turn Conductive Plastic Precision Potentiometer

FEATURES • Bushing mount and servo mount types available • Virtually infinite resolution • Up to 6 sections available • Rotational life exceeds 20 million shaft revolutions • Co-molded track and multi-finger wiper provide low noise signal • Large ohmic value range: 500  to 100 k • Mater

GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz

General Description The HMC308 & HMC308E are low cost MESFET MMIC amplifiers that operate from a single +3 to +5V supply from 0.8 to 3.8 GHz. The surface mount SOT26 amplifier can be used as a broadband amplifi er stage or used with external matching for optimized narrow band applications. Wi

Wiha SoftFinish®. The Specialist for Dry & General Applications.

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Test insulation to 2000M廓

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