P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –20 V, –1.5 A. Rds(on)= 125 mΩ@ Vgs= –4.5

丝印代码：WT1X；P-Channel Mosfet

Product Summary Vbss= -20V, Ip=-2.8A RDS(on) 80m Q@-2.5V( Typ) 110mQ@-4.5V (Typ ) ' High Power and current handing capability Lead free product is acquired Surface Mount Package

丝印代码：308；P-Channel 2.5 V (D-S) MOSFET

Features VDS (V) = -20V RDS(ON)

丝印代码：308；P-Channel 2.5 V (D-S) MOSFET

Applications Power management Load switch Battery protection Features VDS (V) = -20V RDS(ON)

P 沟道，2.5V 指定，PowerTrench™ MOSFET，-20V，-1.5A，125mΩ

Amplifier Transistors(PNP)

Amplifier Transistors PNP Silicon

HIGH EFFICIENCY RECTIFIERS(3.0A,600-1000V)

SCHOTTKY BARRIER RECTIFIERS(3.0A,70-100V)

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages