General Description

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management

applications with a wide range of gate drive voltage (2.5V – 12V).

Features

• –20 V, –1.5 A. Rds(on)= 125 mΩ@ Vgs= –4.5 V

Rds(on)= 190 mΩ@ Vgs= –2.5 V

• Fast switching speed

• High performance trench technology for extremely low Rds(on)

• SuperSOT -3 provides low RDS(ON)and 30 higher power handling capability than SOT23 in the same footprint