25V PowerTrench®功率级25V非对称双N沟道MOSFET

该器件在双PQFN封装中包括两个专用N沟道MOSFET。 该开关节点通过内部连接，能够为同步降压转换器提供简单的布局和布线。 控制MOSFET (Q1)和同步SyncFET (Q2)旨在提供优化的功效。 • Q1: N-ChannelMax rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 AMax rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A\n• Q2: N-ChannelMax rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 34 AMax rDS(on) = 1.6 mΩ at VGS = 4.5 V, ID = 32 A\n• Low inductance packaging shortens rise/fall times, resulting in lower switching ;

PowerTrench짰 Power Stage 25V Asymmetric Dual N-Channel MOSFET

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N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

N-Channel PowerTrench짰 MOSFET 100V, 4.4A, 60m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package.

Lithium-Ion Battery Charger Controller

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IC for CMOS System Reset

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