N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

N-Channel PowerTrench짰 MOSFET 100V, 4.4A, 60m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

N 沟道 PowerTrench® MOSFET 100V，4.4A，60mΩ

N-Channel PowerTrench짰 MOSFET 100V, 4.4A, 60m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

N-Channel PowerTrench짰 MOSFET 100V, 4.4A, 60m廓

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package.

Lithium-Ion Battery Charger Controller

文件：171.03 Kbytes Page：9 Pages

IC for CMOS System Reset

文件：155.25 Kbytes Page：20 Pages