General Description

This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

■ Max rDS(on) = 60mΩ at VGS = 10V, ID = 4.4A

■ Max rDS(on) = 80mΩ at VGS = 6.0V, ID = 3.8A

■ Low Miller Charge

■ Low QRR Body Diode

■ Optimized efficiency at high frequencies

■ UIS Capability (Single Pulse and Repetitive Pulse)

■ RoHS Compliant

Applications

■ Distributed Power Architectures and VRMs.

■ Primary Switch for 24V and 48V Systems

■ High Voltage Synchronous Rectifier

■ Formerly developmental type 82744