Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed

N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 6.2A, 24mΩ

Features Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A Fast switching speed Low gate charge (8nC typical) High performance trench technology for extremely low rDS(on) SuperSOT™–6 package: small footprint (72% smaller than standard SO-8; low

N-Channel 30 V (D-S) MOSFET

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N 沟道，PowerTrench® MOSFET，2.5V 指定，20V，6.2A，24mΩ

N 沟道 PowerTrench® MOSFET，2.5V 指定，20V，6.2A，24mΩ

N-Channel 30 V (D-S) MOSFET

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N-Channel 2.5V Specified PowerTrench짰 MOSFET 20V, 6.2A, 24m廓

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637M Series D-Sub Connectors | Machined Pins | High Density | 0.090 (2.29mm) Contact Spacing X 0.078(1.98mm) Row Spacing | Vertical | Plug

Features High Density With Machined Contacts 0.090(2.29mm) Contact Spacing X 0.078(1.98mm) Row Spacing Plug and Receptacle in 15, 26, 44 or 62 Contact Sizes Pin and Socket Contact Mating Design with P.C. Tail Termination Metal Shell Provides EMI/RFI Shielding,

This series is designed for use where very high DC current must be filtered in a very tight area.

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IC Applicable

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The 637A series filter is a very compact DC filter intended for use with telecommunication hardware

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600H and 600NH series

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