Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed

N 沟道，PowerTrench® MOSFET，2.5V 指定，20V，6.2A，24mΩ

此N沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 与SO-8和TSSOP-8封装的大尺寸不同，这些器件经过专门设计，能以非常小的尺寸提供出色的功耗特性。 •6.2 A，20 V。 RDS(on) = 0.024 Ω @ VGS = 4.5 V, RDS(on) = 0.032 Ω @ VGS = 2.5 V\n•快速开关速度。\n•低栅极电荷（10.5nC，典型值）。\n•高性能沟道技术可实现极低的RDS(ON)。\n•SuperSOT™ -6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）。;

N 沟道 PowerTrench® MOSFET，2.5V 指定，20V，6.2A，24mΩ

此N沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。与SO-8和TSSOP-8封装的大尺寸不同，这些器件经过专门设计，能以非常小的尺寸提供出色的功耗特性。 •VGS = 4.5V，ID = 6.2A时，最大rDS(on) = 24 mΩ \n•VGS = 2.5V，ID = 5.2A时，最大rDS(on) = 32 mΩ \n•快速开关速度\n•低栅极电荷（典型值8nC）\n•高性能沟道技术可实现极低的rDS(on)\n•SuperSOT™-6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）\n•HBM静电放电保护等级为>2kV，典型值（注3）\n•采用绿色封装材料生产。\n•无卤素\n•符合RoHS标准;

丝印代码：.637Z；N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 6.2A, 24mΩ

Features Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A Fast switching speed Low gate charge (8nC typical) High performance trench technology for extremely low rDS(on) SuperSOT™–6 package: small footprint (72% smaller than standard SO-8; low

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N-Channel 2.5V Specified PowerTrench짰 MOSFET 20V, 6.2A, 24m廓

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