P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features –0.6 A, –20 V. Rds(on)= 420 mΩ@ VGS= –4.5 V

P 沟道，2.5V，指定 PowerTrench® MOSFET，-20 V，-0.6 A，420 mΩ

此P沟道2.5V额定MOSFET是采用飞兆半导体先进的PowerTrench工艺生产的稳固栅极版本。 它已针对栅极驱动电压范围(2.5V – 12V)广泛的电源管理应用进行了优化。 •-0.6 A、-20 V。\n•RDS(ON) = 420 mΩ @ VGS = –4.5 V\n•RDS(ON) = 630 mΩ @ VGS = –2.5 V\n•低栅极电荷 \n•高性能沟道技术可实现极低的RDS(ON)\n•紧凑的工业标准SC70-6表面贴装封装;

VTR Recording Video Signal Processing Circuit

Features ● The functions consist of : Video AGC circuit Pre-emphasis circuit Dynamic-emphasis circuit White/Dark clip FM modulator ● Supply voltage : 5 V

VERY LOW-COST VOICE SYNTHESIZER WITH 4-BIT MICROPROCESSOR

General Description The ASM5206C is very low cost voice synthesizer with 4-bit microprocessor. It has various features including 4-bit ALU, ROM, RAM,I/O ports, timers, clock generator, watchdog timer(WDT), voice synthesizer, etc. It consists of 22 instructions in the device. With CMOS technolog

Dual P-Channel 2.5V Specified PowerTrench??MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been desig

3 AMP HIGH-PERFORMANCE ADJUSTABLE ISR

文件：319.25 Kbytes Page：3 Pages