General Description

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management

applications with a wide range of gate drive voltage (2.5V – 12V).

Features

–0.6 A, –20 V. Rds(on)= 420 mΩ@ VGS= –4.5 V

Rds(on)= 630 mΩ@ VGS= –2.5 V

Low gate charge

High performance trench technology for extremely low Rds(on)

Compact industry standard SC70-6 surface mount package