100V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 2.6

N-Channel MOSFET

■ Features ● VDS (V) = 100V ● ID = 2.6 A (VGS = 10V) ● RDS(ON)

N 沟道 PowerTrench® MOSFET 100V，2.6A，125mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •2.6 A, 100 V\n•RDS(on) = 125 mΩ@ VGS = 10 V\n•RDS(on) = 135 mΩ @ VGS = 6 V\n•高性能沟道技术可实现极低的RDS(ON)\n•低栅极电荷（14nC典型值）\n•高功率和高电流处理能力\n•快速开关速度;

丝印代码：362P；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary 100V/3A ROS(ON) 87m2(Typ) @ VGs=-10V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)

Pre-power amplifier for headphone stereos

The BA3612AKV is configured of a pre-amplifier and a headphone amplifier, and contains internal AMS, B.B, AVLS, and BEEP amplifier functions. Also, this IC can be used in combination with the BA3641FV to enable configuration of recording and playback sets. Features 1) Low current consumption. 2

100V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 3.4 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V RDS(ON) = 130 mΩ @ VGS = 6 V • Fast switchin

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DESCRIPTION The MPM3612 is a synchronous, rectified, stepdown, switch-mode power module with built-in internal power MOSFETs and high light-load efficiency. The MPM3612 has an ultra-low 5μA quiescent current (IQ). The MPM3612 offers a very compact solution that can achieve up to 1A of conti

丝印代码：BNR；3V to 22V Input, 1A, Ultra-Low 5μA IQ Power Module in an LGA Package

DESCRIPTION The MPM3612 is a synchronous, rectified, stepdown, switch-mode power module with built-in internal power MOSFETs and high light-load efficiency. The MPM3612 has an ultra-low 5μA quiescent current (IQ). The MPM3612 offers a very compact solution that can achieve up to 1A of conti

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OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUITS description The R3612 is a dual forward-conducting buffered p-gate over voltage protector in a plastic DIP package. It is designed to protect the Ericsson Components PBA 3357/3 DCLIC (Dual Channel Complete Line Interface Circ