General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

• 2.6 A, 100 V RDS(ON) = 125 mΩ @ VGS = 10 V

RDS(ON) = 135 mΩ @ VGS = 6 V

• High performance trench technology for extremely

low RDS(ON)

• Low gate charge (14nC typ)

• High power and current handling capability

• Fast switching speed

Applications

• DC/DC converter