100V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 3.4 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V RDS(ON) = 130 mΩ @ VGS = 6 V • Fast switchin

100V N-Channel PowerTrench MOSFET

N-Channel 100-V (D-S) MOSFET

Application LED Backlighting Synchronous Rectifiers for SMPS o Power management « PWM Application

Pre-power amplifier for headphone stereos

The BA3612AKV is configured of a pre-amplifier and a headphone amplifier, and contains internal AMS, B.B, AVLS, and BEEP amplifier functions. Also, this IC can be used in combination with the BA3641FV to enable configuration of recording and playback sets. Features 1) Low current consumption. 2

3V to 22V Input, 1A, Ultra-Low 5μA IQ Power Module in an LGA Package

DESCRIPTION The MPM3612 is a synchronous, rectified, stepdown, switch-mode power module with built-in internal power MOSFETs and high light-load efficiency. The MPM3612 has an ultra-low 5μA quiescent current (IQ). The MPM3612 offers a very compact solution that can achieve up to 1A of conti

丝印代码：BNR；3V to 22V Input, 1A, Ultra-Low 5μA IQ Power Module in an LGA Package

DESCRIPTION The MPM3612 is a synchronous, rectified, stepdown, switch-mode power module with built-in internal power MOSFETs and high light-load efficiency. The MPM3612 has an ultra-low 5μA quiescent current (IQ). The MPM3612 offers a very compact solution that can achieve up to 1A of conti

PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC

OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUITS description The R3612 is a dual forward-conducting buffered p-gate over voltage protector in a plastic DIP package. It is designed to protect the Ericsson Components PBA 3357/3 DCLIC (Dual Channel Complete Line Interface Circ