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FDB940价格
参考价格：￥11.9070
型号：FDB9403_F085 品牌：Fairchild 备注：这里有FDB940多少钱，2025年最近7天走势，今日出价，今日竞价，FDB940批发/采购报价，FDB940行情走势销售排行榜，FDB940报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=93A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c | ISC 无锡固电 |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC | ISC 无锡固电 | | ||
N-Channel Power Trench짰 MOSFET 40V, 110A, 1.8m廓 Features ■ Typ rDS(on) = 1.31mΩ at VGS = 10V, ID = 80A ■ Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ Powertrain Management ■ Solenoid and Motor Drivers ■ Electronic Steering ■ Integrated | Fairchild 仙童半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID=90A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c | ISC 无锡固电 | | ||
N-Channel Power Trench짰 MOSFET 40V, 110A, 1.2m廓 文件：490.88 Kbytes Page：6 Pages | Fairchild 仙童半导体 | | ||
MOSFET N-CH 40V 110A TO263AB | ONSEMI 安森美半导体 | | ||
N-Channel Power Trench짰 MOSFET 40V, 110A, 1.2m廓 文件：484.65 Kbytes Page：6 Pages | Fairchild 仙童半导体 | | ||
N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，110 A，1.2 mΩ | ONSEMI 安森美半导体 | | ||
N-Channel Logic Level PowerTrench짰 MOSFET 文件：537.02 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
N 沟道，PowerTrench® MOSFET，40 V，110 A，1.8 mΩ | ONSEMI 安森美半导体 | | ||
N-Channel Logic Level PowerTrench MOSFET 文件：512.89 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
N-Channel PowerTrench짰 MOSFET40 V, 80 A, 3.5 m廓 文件：623.61 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
N-Channel Logic Level PowerTrench MOSFET 文件：507.94 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
N-Channel Logic Level PowerTrench MOSFET 文件：507.94 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
SB® 175 Connectors Up to 280 Amps Wires sizes from 10 to 1/0 AWG (5.3 to 50 mm²) fit in the second to largest connector in the SB® series. The 3 pole SB® 175 adds an additional position for power or grounding. All Multipole wire connector housings are genderless and mate to themselves minimizing inventory and assembly complex | APP | | ||
NYLON TUBE SPACERS 文件：202.86 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
NYLON TUBE SPACERS 文件：202.86 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
ECHOTEL짰CONTACTULTRASOUND 文件：1.01159 Mbytes Page：8 Pages | MAGNETROL 磁控国际 | | ||
PCB connector Screw connection 文件：167.88 Kbytes Page：1 Pages | WECO | |
FDB940产品属性
- 类型
描述
- 型号
FDB940
- 功能描述
MOSFET 40V 110A 1.2m? N-Ch PowerTrench MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
797 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
25+ |
TO-2632L(D2PAK) |
22800 |
原装正品,假一罚十! |
|||
ONSEMI/安森美 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ON/安森美 |
17+P |
TO-263 |
797 |
||||
onsemi(安森美) |
24+ |
TO-263 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ON |
23+ |
IC |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON(安森美) |
25+ |
TO-263 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
ON |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
|||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
FDB940规格书下载地址
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2021-5-20
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